1/9 march 2002 . std10pf06 p-channel 60v - 0.18 w - 10a ipak/dpak stripfet ? ii power mosfet n typical r ds (on) = 0.18 w n exceptional dv/dt capability n 100% avalanche tested n low gate charge n application oriented characterization n through-hole ipak (to-251) power package in tube (suffix a-1o) n surface-mounting dpak (to-252) power package in tape & reel (suffix at4o) description this power mosfet is the latest development of stmicroelectronis unique osingle feature size ? o strip- based process. the resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. applications n motor control n dc-dc & dc-ac converters type v dss r ds(on) i d std10pf06 60 v < 0.20 w 10 a 3 2 1 1 3 ipak to-251 (suffix a-1o) dpak to-252 (suffix at4o) absolute maximum ratings ( ? ) pulse width limited by safe operating area. note: p-channel mosfet actual polarity of voltages and current has to be reversed (1) i sd 10a, di/dt 300a/ m s, v dd v (br)dss ,t j t jmax symbol parameter value unit v ds drain-source voltage (v gs =0) 60 v v dgr drain-gate voltage (r gs =20k w ) 60 v v gs gate- source voltage 20 v i d drain current (continuous) at t c =25 c10 a i d drain current (continuous) at t c = 100 c 7a i dm( ? ) drain current (pulsed) 40 a p tot total dissipation at t c =25 c 40 w derating factor 0.27 w/ c dv/dt (1) peak diode recovery voltage slope 6 v/ns t stg storage temperature -65 to 175 c t j max. operating junction temperature 175 c internal schematic diagram
std10pf06 2/9 thermal data avalanche characteristics electrical characteristics (t case =25 c unless otherwise specified) off on (* ) dynamic rthj-case rthj-amb t l thermal resistance junction-case thermal resistance junction-ambient maximum lead temperature for soldering purpose max max 3.75 100 275 c/w c/w c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 10 a e as single pulse avalanche energy (starting t j =25 c, i d =i ar ,v dd =25v) 125 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a, v gs =0 60 v i dss zero gate voltage drain current (v gs =0) v ds = max rating v ds = max rating t c = 125 c 1 10 m a m a i gss gate-body leakage current (v ds =0) v gs = 20v 1 m a symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs i d = 250 m a 24v r ds(on) static drain-source on resistance v gs =10v i d =5a 0.18 0.20 w symbol parameter test conditions min. typ. max. unit g fs (*) forward transconductance v ds =25v i d =5 a 25 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs =0 850 230 75 pf pf pf
3/9 std10pf06 switching on switching off source drain diode (*) pulsed: pulse duration = 300 m s, duty cycle 1.5 %. ( ? ) pulse width limit ed by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd =30v i d =5a r g = 4.7 w v gs =10v (resistive load, figure 3) 20 40 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =48vi d =10av gs =10v 16 4 6 21 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd =30v i d =5a r g = 4.7 w, v gs =10v (resistive load, figure 3) 40 10 ns ns t r(voff) t f t c off-voltage rise time fall time cross-over time v clamp =48v i d =10a r g = 4.7 w, v gs =10v (inductive load, figure 5) 10 17 30 ns ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 10 40 a a v sd (*) forward on voltage i sd =10a v gs =0 2.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 10 a di/dt = 100a/ m s v dd =30v t j = 150 c (see test circuit, figure 5) 100 260 5.2 ns m c a electrical characteristics (continued) safe operating area thermal impedance
std10pf06 4/9 output characteristics transfer characteristics transconductance static drain-source on resistance gate charge vs gate-source voltage capacitance variations
5/9 std10pf06 normalized gate threshold voltage vs temperature normalized on resistance vs temperature source-drain diode forward characteristics normalized breakdown voltage temperature ..
std10pf06 6/9 fig. 1: unclamped inductive load test circuit fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times
7/9 std10pf06 dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a3 0.7 1.3 0.027 0.051 b 0.64 0.9 0.025 0.031 b2 5.2 5.4 0.204 0.212 b3 0.85 0.033 b5 0.3 0.012 b6 0.95 0.037 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 15.9 16.3 0.626 0.641 l 9 9.4 0.354 0.370 l1 0.8 1.2 0.031 0.047 l2 0.8 1 0.031 0.039 a c2 c a3 h a1 d l l2 l1 13 == b3 b b6 b2 e g == == b5 2 to-251 (ipak) mechanical data 0068771-e
std10pf06 8/9 dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.9 0.025 0.035 b2 5.2 5.4 0.204 0.212 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 9.35 10.1 0.368 0.397 l2 0.8 0.031 l4 0.6 1 0.023 0.039 == d l2 l4 13 == b e == b2 g 2 a c2 c h a1 detail oao a2 detail oao to-252 (dpak) mechanical data 0068772-b
9/9 std10pf06 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in lif e support devices or systems without express written approval of stmicroelectronics. the st logo is registered trademark of stmicroelectronics ? 2002 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://w ww.st.com
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